Proceedings of Asia-Pacific Conference on Perovskite, Organic Photovoltaics&Optoelectronics (IPEROP25)
Publication date: 17th October 2024
Interfaces between metal halide perovskites and carrier transport layers have been identified as significant centers for non-radiative charge carrier recombination in metal halide perovskite solar cells. For tin halide perovskite (SnPVSK) solar cells, most previous research has used solution-processed surface treatments or interlayers to suppress charge carrier recombination at the interface between the SnPVSKs and electron transport layers (ETLs). In this work, vacuum-deposited metal halides were used as interlayers between SnPVSKs and C60 ETLs. With optimized metal halide interlayer, the open-circuit voltage and fill factor of the FA0.75MA0.25SnI3 (FA: formamidinium; MA: methylammonium) solar cells increased, resulting in an enhancement in the power conversion efficiency of the devices from 10.2% to 12.8%. The interlayers also enhanced the performance of FASnI3 and PEA0.15FA0.85SnI3 (PEA: phenethylammonium) solar cells. Electrochemical impedance spectroscopy and photoluminescence results confirmed reduced non-radiative recombination at the interface when the metal halide interlayer was present. Kelvin probe results further revealed that the width of the downward band bending in C60 toward the SnPVSK/C60 interface was reduced, leading to reduced barrier for electron extraction and thus improved device performance.
This research is partially financially supported by JST-Mirai (JPMJMI22E2), NEDO-GI (JPNP21016), NEDO (JPNP20015), Grant-in-Aid for Scientific Research (A) (21H04699, JP24H00481), Grant-in-Aid for JSPS Research Fellows (24KF0053), and International Collaborative Research Program of Institute for Chemical Research.
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