Interfacial Passivation for Improved Crystallinity in Wide Bandgap Tin Perovskite Solar Cells
Ajay Kumar Baranwal a, Qing Shen a, Shuzi Hayase a
a i-PERC, The University of Electro-Communications, Tokyo
Poster, Ajay Kumar Baranwal, 074
Publication date: 17th October 2024

Lead-halide perovskite solar cells have emerged as a breakthrough technology in photovoltaics due to their advantages, including simple solution processing, low exciton binding energy, high absorption coefficient, long carrier diffusion lengths, and tunable bandgap. Tandem solar cells, or multijunction solar cells, are capable of harvesting a broader spectrum of sunlight and overcoming the single-junction Shockley-Queisser (S-Q) limit. The realization of such tandem solar cells requires a wide-bandgap solar cell as the top subcell. However, wide-bandgap lead-halide perovskite solar cells face concerns regarding lead toxicity, prompting extensive research into lead-free alternatives. Among these, tin halide perovskites have shown promising potential, exhibiting similar optoelectronic properties to their lead-halide counterparts, including excellent absorption coefficients, low exciton binding energies, high charge mobility, and outstanding photoluminescent quantum yields. [1]

The primary performance limitations in wide-bandgap tin perovskite solar cells stem from a poor crystallization process. Rapid perovskite crystal growth leads to bulk defect states, which, in turn, cause nonradiative recombination losses. This issue is most evident in the form of significant open-circuit voltage losses. We implemented an interfacial tunneling interlayer strategy to address this, which enhanced perovskite crystallinity and mitigated back-charge recombination. This approach improved open-circuit voltage and overall device performance. Solar cells were fabricated in FTO/PEDOT:PSS (PT:PS)/wide Sn-perovskite/C60/BCP structure.

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