Interface Engineering and Charge Carrier Management of Quantum Dot Solar Cells
Qing Shen a
a The University of Electro-Communications, 1-5-1 Chofugaoka, Chofu, Tokyo 182-8585, Tokyo, Japan
Invited Speaker, Qing Shen, presentation 029
Publication date: 17th October 2024

Colloidal quantum dots (QDs) have gained significant attention for both fundamental research and applications of optoelectronic devices owing to their appealing optoelectronic properties and excellent chemical processability. For their wide range of potential applications, synthesizing colloidal QDs with high crystal quality and stability is of crucial importance. One key is how to reduce the surface defects of QDs which give rise to detrimental non-radiative recombination centers and thus quenching luminescence. In recent years, we have suceeded in synthesis of less defect QDs such as PbS QDs and preovksite QDs including APbX3 QDs, Sn-Pb alloyed QDs and Sn-based QDs[1-10]. On the other hand, QD solar cell has attracted much interest as a next-generation solar cell because of its low cost and potential to surpass the Shockley–Queisser limit. However, the current power conversion efficiency (PCE) of QD solar cells remains significantly below its theoretical limit, highlighting the need for fundamental research. The main challenges in improving the PCE include inefficient charge transport and extraction, as well as high non-radiative recombination at the device interfaces. In this talk, recent breakthroughs in enhancing QD solar cell PCE through interface engineering and charge carrier management will be presented.

This research was partially supported by JSPS KAKENHI (Grant Numbers 20H02565, 26286013).

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