Publication date: 4th October 2024
Tin (Sn)-based perovskites have garnered significant interest for their applications in perovskite transistors. Despite significant progress, Sn-based perovskites are still plagued by a propensity for rapid oxidation from Sn2+ to Sn4+, leading to unwanted self p-doping and reduced stability. In particular, two-dimensional (2D) Sn-based perovskites have higher stability than three-dimensional (3D) counterparts. In our study, we demonstrated that the strategic incorporation of porphyrin like additives, especially, effectively mitigates Sn oxidation in 2D perovskite films, thereby reducing defect density. Consequently, devices modified with these additives show improved ambient and electrical stability, enhanced photoresponse, and higher mobility, with film mobility increases of up to 5 cm2 V−1 s−1. Furthermore, the perovskite transistors exhibit non-volatile photomemory characteristics. Also, we use several different wavelength of light to stimulate our devices and tried many stimulate time. These enhancements, especially in photoresponse and air stability, render the modified devices as promising candidates for future photomemory technology applications.
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