Interface engineering for high voltage lead-based and lead-free perovskite solar cells
Tsutomu Miyasaka a
a Toin University of Yokohama, 1614 Kurogane-cho, Aoba, Yokohama, 2258503, Japan
Proceedings of Asia-Pacific Conference on Perovskite, Organic Photovoltaics&Optoelectronics (IPEROP25)
Kyoto, Japan, 2025 January 19th - 21st
Organizers: Atsushi Wakamiya and Hideo Ohkita
Invited Speaker, Tsutomu Miyasaka, presentation 001
Publication date: 4th October 2024

Achieving power conversion efficiency (PCE) of 26%, the current R&Ds of perovskite solar cells (PSCs) have focused on durability improvement by interfacial engineering using organic molecules, for defect passivation at grain boundaries and heterojunction interfaces in PSCs.1 Our recent study also focuses on the method of interfacial passivation with polarizable organic molecules enable high voltage output (close to theoretical limit) in photovoltaic performance.2 In compositional engineering, all-inorganic perovskites, which have high thermal stability, are targets of interfacial modification. CsPbX3 (X=I, Br) was combined with dopant-free polymer hole transport material (HTMs) with high thermal stability.2 By modifying the interface of electron transport material (ETM, SnO2) and CsPbI2Br (bandgap 1.9eV) with an amorphous SnOx layer (<5 nm), PSC achieved high Voc over 1.4V with PCEs of >17%. Under indoor LED illumination, the device works at PCE >34% being supported by high Voc >1.2V. Further, passivation of iodine defects with 2,5-thiophenedicarboxylic acid (TDCA) achieved Voc of 1.54V for CsPbIB2.3 These studies demonstrate that the development of heat-resistant all-inorganic PSCs is promising through proper modification of the heterojunction interface. Interfacial engineering is a more serious challenge for lead-free perovskites which undergo a large recombination loss in voltage generation. Among lead-free compositions, Ag-Bi iodide materials are environmentally benign solution-processible materials and highly stable against heat and moisture (H2O). By introducing an SnOx layer on a surface of SnO2 ETM, a device using perovskite-like Ruddorfite material, Ag2BiI5 (bandgap 1.88eV), was improved to have a high Voc close to 0.9V.4 Molecular passivation and modification of junction interfaces and grain surfaces are pivotal to ensure high Voc performance of all-inorganic lead-based and lead-free perovskite materials.

 

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