MASnI3 Perovskite Films Synthesized Using Sn Metallic Thin Films in Presence of MAI Vapor
Said Kazaoui a
a National Institute of Advanced Industrial Science and Technology (AIST)
Asia-Pacific International Conference on Perovskite, Organic Photovoltaics and Optoelectronics
Proceedings of Asia-Pacific International Conference on Perovskite, Organic Photovoltaics and Optoelectronics (IPEROP24)
Tokyo, Japan, 2024 January 21st - 23rd
Organizers: Qing Shen and James Ryan
Poster, Said Kazaoui, 049
Publication date: 18th October 2023

Sn-based perovskite solar cells (PSCs) are of great interest to overcome the problem of toxicity of Pb-based PSCs. Several methods to synthesize Sn-based perovskite films by solution and vacuum processes have already been reported. For instance, CH3NH3SnI3 (MASnI3) are often synthesized by the reaction of SnI2 and CH3NH3I (MAI) dissolved in organic solutions including various additives to control the crystallinity and to prevent the oxidation of Sn2+ into Sn4+, which are known to hamper the performance of the solar cells [1]. Note that very few reports have also demonstrated that CH3NH3SnI3 thin films can be synthesized by the reaction of Sn thin films in the presence of MAI in solution or in gas phase [2, 3]. Based on this information and on our previous experience with the synthesis of CH3NH3PbI3 (MAPbI3) by reaction of Pb thin film in the presence of CH3NH3I+I2 [4], we studied the synthesis of CH3NH3SnI3 from Sn thin films.

Here, we report that CH3NH3SnI3 thin film can be readily synthesized by heating Sn thin film pre-deposited on glass subtract (at around 90 oC) and CH3NH3I powder source (at around 145 oC, 0.1 Atm), in a 2-zone furnace as shown in figure 1. We observed that the synthesis of CH3NH3SnI3 thin films occurs by a one-step chemical vapor reaction of Sn thin film in the presence of CH3NH3I vapor (and/or the byproducts due to thermal decomposition). According to x-ray diffraction study and thermogravimetry/mass spectroscopy data, we will discuss several reaction mechanisms (such as in eq. (1)). Note that the chemical nature of the intermediate phase and the byproducts are still highly debated.

Sn + 3CH3NH3I → CH3NH3SnI3 + (2CH3NH2 + H2)      (1)

Interestingly, the above-mentioned reaction does not require any additive (such as SnF2) to prevent the formation of Sn4+, because the reaction Sn4+ + Sn → 2Sn2+ will take place until all the Sn is completely consumed. Note that in the solution process, Sn has also been recently used to synthesize high-purity SnI2 by the reaction Sn +I2, which also prevents the formation of Sn4+ and SnI4.


In conclusion, we have developed a one-step chemical vapor reaction process to synthesize CH3NH3SnI3  (MASnI3) by directly converting Sn thin films in the presence of CH3NH3I (MAI) vapor at moderate temperatures. This method can be applied to synthesize various types of Sn-based perovskite (e.g., FASnI3).

I acknowledge Dr. Ivan Turkevych (AIST) for valuable discussions. This work was financially supported by JSPS KAKENHI Grant Number 19K05683.

 

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