Benzylamine Passivation of Wide-Bandgap Perovskite
Suer Zhou a, Junxiang Zhang b, Yangwei Shi c, Joel Smith a, James Drysdale a, Benjamin Gallant a, Margherita Taddei c, Harry Sansom a, Declan McCarthy b, Stephen Barlow b, Akash Dasgupta a, Ashley Marshall a, Jian Wang c, David Ginger c, Seth Marder b, Henry Snaith a
a Department of Physics, University of Oxford, Clarendon Laboratory, Parks Road, OX1 3PU, United Kingdom
b Department of Chemical and Biological Engineering, University of Colorado Boulder, United States
c Department of Chemistry, University of Washington, Seattle, WA, 98195-1700, USA
Asia-Pacific International Conference on Perovskite, Organic Photovoltaics and Optoelectronics
Proceedings of Asia-Pacific International Conference on Perovskite, Organic Photovoltaics and Optoelectronics (IPEROP24)
Tokyo, Japan, 2024 January 21st - 23rd
Organizers: Qing Shen and James Ryan
Oral, Suer Zhou, presentation 039
DOI: https://doi.org/10.29363/nanoge.iperop.2024.039
Publication date: 18th October 2023

Perovskite with a bandgap around 1.65-1.70 eV [1] is commonly used for the top cell in silicon/perovskite tandem solar cells. However, because they are often made with mixed-cation, mixed halide compositions, they often suffer from film inhomogeneity and photoinduced halide segregation, which will impact their long-term stability during operation.

We employ benzylamine as a bulk additive to stabilize wide-bandgap mixed halide perovskites. Amines and ammonium halides have often been used to passivate perovskite materials. However, the understanding of how they interact with the perovskite is still limited. In this work, a 1.68 eV wide-bandgap MA-free perovskite is used as an example to show how benzylamine (BnAm) can affect the composition and phases present in the perovskite. We found that depending on the organic cations in the perovskite, the amine reaction can be quite different. In addition, while benzylamine additives cause lower-dimensional phases to form, their corresponding benzyl ammonium halide additives do not. By using BnAm as an additive, the photoluminescence quantum yield (PLQY) and open-circuit voltage of the device were improved. Moreover, compared to the pristine perovskite or BnAm surface-treated perovskite devices, BnAm bulk additive devices achieved a longer T80 stability of 2,460 hours under combined 65°C heat and AM1.5 light stress test. BnAm-modified wide-bandgap perovskite has great potential to be integrated into silicon/perovskite tandem solar cells to improve their overall operational lifetime.

This paper is based on work supported primarily by the Office of Naval Research (Award # N00014-20-1-2587). SZ acknowledges the Rank Prize Funds for their funding. The authors thank Aiswarya Abhisek Mohapatra, Molly Christine Larsen, and Jonathan Russel Thurston for help with single-crystal X-ray data acquisition, and Dr. Nakita K. Noel for a critical reading of the manuscript.

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