Simultaneous Surface Enhancement of n and p Type Transport Layers for Back Contacted Perovskite Modules
Molly Worth c, David Beynon a, Dima Sirbu b, Trystan Watson a
a SPECIFC, Faculty of Science and Engineering, Swansea University, SA18EN, UK
b Power Roll Ltd, Turbine Way, 2, Sunderland, United Kingdom
c Swansea University, Singleton Park, Swansea, United Kingdom
Asia-Pacific International Conference on Perovskite, Organic Photovoltaics and Optoelectronics
Proceedings of Asia-Pacific International Conference on Perovskite, Organic Photovoltaics and Optoelectronics (IPEROP24)
Tokyo, Japan, 2024 January 21st - 23rd
Organizers: Qing Shen and James Ryan
Oral, Molly Worth, presentation 021
DOI: https://doi.org/10.29363/nanoge.iperop.2024.021
Publication date: 18th October 2023

The most widely studied photovoltaic device in current literature are flexible thin film planar Perovskite Solar Cells (PSCs). Perovskite solar technology has been evolving for over a decade reaching impressive power conversion efficiencies (PCEs) of over 25%. Thin film PSCs are flexible and lightweight, enabling installation upon any type of surface. They are also scalable, being roll-to-roll compatible [1], enabling the manufacture of such technologies to be rapid and low cost. We introduce a novel thin Back-Contact (BC) Perovskite Solar Micro Module architecture consisting of a series of electrically connected V-shaped microgrooves containing selectively evaporated n- and p-type contacts on each groove wall [2]. This is followed by scalable deposition of the Perovskite absorbing layer, being in direct contact with the illuminating source allowing for highly conductive n and p type materials to be employed as the requirement for transparent materials is diminished. Some enhancements in planar PSCs performance can be attributed to surface treatments such as UV-Ozone and Oxygen plasma treatments and are commonly employed to improve the bulk and interfacial properties of the as deposited n and p-type materials in isolation. However, with the BC device architecture both n and p-type semiconductors are exposed to surface treatment. A surface treatment enhancing both n and p-type interfacial and semi-conducting properties simultaneously is required to enhance electrical performance. During this work a new treatment method was developed that allows for simultaneous enhancements of both n and p-type materials. It was found that PCEs, open circuit voltage (Voc), short circuit current (Jsc) and fill factor (FF) increases by up to 201%, 26.7%, 94.1% and 22.6% respectively. Analysis has been conducted to explain the mechanisms responsible for electrical performance enhancement. Multiple factors are combined to improve the performance of micro-modules these include surface energy, surface stoichiometry and charge transport capabilities. Contact angle analysis reveals that the wettability of both n and p type surfaces are improved whilst reducing void formation. X-Ray Photoemission Spectroscopy (XPS) analysis indicates improvements in p-type surface chemistry whilst having potential to be detrimental to the n type material. However, through careful control of processing parameters benefits of p type stoichiometry can be maintained whilst having minimal detriment to the n type material. Time resolved Photoluminescence (TRPL) demonstrates that surface enhancements improve charge transport capabilities resulting in the observed photovoltaic performance. 

 

The authors would like to acknowledge the Materials and Manufacturing Academy and Coated CDT (COATED M2A) at Swansea University, Power Roll Ltd, Engineering and Physical Sciences Research Council (ESPRC via UKRI) EP/S02252X/1, and the European Social Fund via the Welsh Government (WEFO) (c80816) for funding this work. The authors would also like to acknowledge the SPECIFIC Innovation and Knowledge Centre who are funded by the European Regional Development Fund through the Welsh Government and the Engineering and Physical Sciences Research Council (EPSRC) (EP/N020863/1)

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