Proceedings of Asia-Pacific International Conference on Perovskite, Organic Photovoltaics and Optoelectronics (IPEROP24)
DOI: https://doi.org/10.29363/nanoge.iperop.2024.011
Publication date: 18th October 2023
Halide perovskite materials find applications in solar cells, X-Ray detectors or memory storage devices. This type of perovskites are mixed electronic and ionic conductors that typically display a strong hysteresis during the electrical characterization. The ionic conductivity is responsible for a memory effect that leads to undesirable hysteresis in the solar cell configuration.2 Alternatively, in the resistive memory configuration this hysteresis is a requirement and needs to be well understood to offer a good control of the conductive states. Here, we show that the working mechanism, performance and stability of the solar cells and memory devices can be tuned and improved by a careful selection of each structural layer. Several configurations are evaluated in which structural layers are modified systematically: formulation of the perovskite3, the nature of the buffer layer4 and the nature of the metal contact5. Overall, we provide solid understanding on the operational mechanism of halide perovskite electronic devices that unveils the connection between electronic and ionic conduction.
This study forms part of the Advanced Materials programme and was supported by MCIN with funding from European Union NextGenerationEU (PRTR-C17.I1) and by Generalitat Valenciana (MFA/2022/055).
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