Proceedings of Asia-Pacific International Conference on Perovskite, Organic Photovoltaics and Optoelectronics (IPEROP23)
DOI: https://doi.org/10.29363/nanoge.iperop.2023.012
Publication date: 21st November 2022
Title: Grain Engineering for Improved Charge Carrier Transport in Two-Dimensional Lead-Free Perovskite Field-Effect Transistors
Authors: Shuanglong Wang1, Sabine Frisch2, Heng Zhang1, Okan Yildiz1, Mukunda Mandal1, Naz Ugur1, Beomjin Jeong1, Charusheela Ramanan1,3, Denis Andrienko1, Hai Wang1, Mischa Bonn1, Paul W. M. Blom1, Milan Kivala2, Wojciech Pisula,1,4,* and Tomasz Marszalek1,4,*
Address: 1Max Planck Institute for Polymer Research, Ackermannweg 10, 55128 Mainz, Germany
2 Organisch-Chemisches Institut, Centre for Advanced Materials, Ruprecht-Karls-Universität Heidelberg, 69120 Heidelberg, Germany
3 Department of Physics and Astronomy, Faculty of Sciences, Vrije Universiteit Amsterdam, De Boelelaan 1081, 1081 HV Amsterdam, Netherlands
4 Department of Molecular Physics, Faculty of Chemistry, Lodz University of Technology, Zeromskiego 116, 90-924 Lodz, Poland
Email: wangs2@mpip-mainz.mpg.de, pisula@mpip-mainz.mpg.de, marszalek@mpip-mainz.mpg.de
Controlling crystal growth and reducing number of grain boundaries are crucial to maximize the charge carrier transport in polycrystalline perovskites field-effect transistors (FETs). Herein, the crystallization and growth kinetics of Sn(II)-based 2D perovskite, using 2-thiopheneethylammonium (TEA) as the organic cation spacer, was effectively regulated by the hot-casting method. With increasing crystalline grain size, the local charge carrier mobility is found to increase moderately from 13 cm2V–1s–1 to 16 cm2V–1s–1, as inferred from terahertz (THz) spectroscopy. In contrast, the FET operation parameters, including mobility, threshold voltage, hysteresis, and subthreshold swing improve substantially with increasing grain size, especially for large channel lengths. This behavior is mainly attributed to screening of the applied electric fields by ion migration that becomes severe for small grain sizes and high densities of grain boundaries. Electrical characterization at various temperatures (from 295K to 100K) presents an influence of the ion migration on the charge carrier transport in transistors architecture. Moreover, it is confirmed by grazing incident wide angle x-ray scattering and theoretical unit cell prediction that hot-casting method does not change the molecular organization in deposited thin films but only reduce the number of grain boundaries. The optimized 2D (TEA)2SnI4 transistor exhibits hole mobility of up to 0.34 cm2V−1s−1 at 295 K and higher value of 1.8 cm2V−1s−1 at 100 K. These insights provide important guidance for the grain engineering for high-performance 2D perovskite FETs.
S. Wang thanks the China Scholarship Council (CSC, 201906890035) for financial support. M. Mandal acknowledges postdoctoral support from the Alexander von Humboldt Foundation. T. Marszalek acknowledges the Foundation for Polish Science financed by the European Union under the European Regional Development Fund (POIR.04.04.00-00-3ED8/17). The authors thank Dr. Hao Wu for the help with UPS measurements. This work was supported by the Deutsche Forschungsgemeinschaft (DFG, German Research Foundation) - project number 424708673 and by the KAUST Office of Sponsored Research (OSR).
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