Perovskite solar cells consisting of Tin
Shuzi Hayase a
a Info-Powered Energy System Research Center (i-PERC), The University of Electro-Communications, Japan, 1-5-1 Chofugaoka, Chofu, Tokyo, 182-8585,, Japan
Asia-Pacific International Conference on Perovskite, Organic Photovoltaics and Optoelectronics
Proceedings of Asia-Pacific International Conference on Perovskite, Organic Photovoltaics and Optoelectronics (IPEROP23)
Kobe, Japan, 2023 January 22nd - 24th
Organizers: Seigo Ito, Hideo Ohkita and Atsushi Wakamiya
Invited Speaker, Shuzi Hayase, presentation 007
DOI: https://doi.org/10.29363/nanoge.iperop.2023.007
Publication date: 21st November 2022

Tin perovskite solar cells (Sn-PVK PVs) have attracted attention as Pb free PVK PVs having the band gap of about 1.3-1.4 eV, which is the best band gap from the viewpoint of Shockley-Queisser limit. One of the alloyed perovskites, Tin Lead perovskite solar cells (SnPb-PVK PV) is a candidate as the bottom layer of the perovskite tandem solar cells(1). We have reported Ge ion doped Sn-PVK solar cells with the efficiency higher than 14% and SnPb alloyed perovskite solar cells with the efficiency higher than 23%. In this talk, we discuss these high efficiencies from the viewpoint of modified hole transport layers. In almost all Sn-PVK PVs, PEDOT-PSS has been employed. We now report the SnOx (x=1.77) as the hole transporting layer. The normal structure with SnOx layer working as ETL did not give sufficiency efficiency which has been already reported by us(2). However, the inverted structure consisting of SnOx working as the hole transporting layer gave the efficiency of 14. 1%(ACS Energy Letters, accepted). The mechanism is discussed in detail. In addition, we report SnPb-PVK PV with 23.3 % efficiency by using mixed 2PACz/methylphosphonic acid hole transport layer, where we aimed at enhanced surface coverage on FTO by mixing small and large phosphonic acids(3).

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