Proceedings of Asia-Pacific International Conference on Perovskite, Organic Photovoltaics and Optoelectronics (IPEROP20)
Publication date: 14th October 2019
The technological demands for high-efficiency solar cells have stimulated research on transparent conductive oxide (TCO) films. High electron mobility is needed to achieve high conductivity with improved visible and near-infrared transparency. In addition, low temperature growth with low plasma damage is also required for deposition when the TCO films are deposited on absorbing layers of solar cells and/or substrates sensitive to heat and ion bombardment. Historically, polycrystalline (poly-) Sn-doped In2O3 (typical Sn/In ratios are 3–10 at.%) or amorphous (a-) In-Zn-O by magnetron sputtering have been used for solar cells as standard TCOs to achieve moderate mobility (~ 50 cm2V-1s-1) using low growth temperatures. Recently, solid-phase crystallized (spc-) H-doped In2O3 (In2O3:H) and transition metal (Me) and H co-doped films (In2O3:Zr,H, In2O3:W,H, In2O3:Ce,H) with low Me contents (typical Me/In ratios are ~1 at.% or less) with significantly higher mobility (80–160 cm2V-1s-1) have been developed. These films can be fabricated by magnetron sputtering, reactive plasma deposition with lower energy ion bombardment, and atomic layer deposition without ion bombardment at process temperatures of 150–180°C. The advantage of the TCO materials and film growth have been demonstrated in Si heterojunction solar cells (> 23%), Si thin-film triple junction solar cells (14.0%), and CIGS mini-modules (20.93%) with high conversion efficiency. Here, we introduce our recent works on the TCO layers for the solar cells.