Proceedings of International Conference on Perovskite and Organic Photovoltaics and Optoelectronics (IPEROP19)
Publication date: 23rd October 2018
Organic-inorganic hybrid perovskite has attracted tremendous attention due to its high power conversion efficiency (PCE) in solar cell application. To further enhance PCE of perovskite solar cells (PSC), it is important to improve the interfacial energy alignment between the perovskite layer and the adjoin layers because the energy level alignment between adjoin layers effect on photo-generated charge carrier transport. The CH3NH3PbI3 (MAPbI3) perovskite film is known to be an n-type semiconductor, and there are reports that PCE of PSCs have improved by doping p-dopant into the perovskite precursor. Although the PCE of PSC is improved through the p-dopants, studies on the energy levels of p-doped perovskite are lacking. We have studied here copper thiocyanate (CuSCN) doped MAPbI3. In particular, we have confirmed that the energy level of CuSCN doped MAPbI3 which is measured by ultraviolet photoelectron spectroscopy, is p-type semiconductor and the morphology of CuSCN doped MAPbI3 shows similar grain size with low temperature annealing. From those advantages, the PCE of the PSC increased with CuSCN doping even at 60 °C low temperature annealing.
This study was supproted by the Natinal Research Foundation of Korea [NRF-2018R1D1A1B07051050, 2018R1A6A1A03025582, 2017R1A2B4002442, and 2017R1A5A1014862 (SRC program: vdWMRC center)]
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