Publication date: 8th January 2019
Hybrid organic-inorganic perovskites are promising candidates for the next generation of thin film photovoltaic technologies due to their unique photophysical and structural properties. A unique feature is the possibility of tuning these properties by changing precursor ratios of the perovskite, such as methylammonium iodide (MAI) and PbI2 in the archetypical methylammonium lead iodide (MAPI) perovskite. In vacuum deposition, the stoichiometry can be simply controlled by modifying the precursor’s sublimation rate. In this way, we were able to tune the Fermi level and hence producing p- and n-type MAPI films, as well as to passivate the trap states increasing the MAPI photoluminescence efficiency. The doped MAI films were assembled into a perovskite-perovskite homojunction by vacuum deposition of a n-type doped (PbI2 excess) MAPI on top of a p-type doped (MAI excess) MAPI. We analyzed the resulting thin-film junction by cross- sectional scanning Kelvin probe microscopy (SKPM) and found a contact potential difference (CPD) of 250 mV between the two differently doped perovskite layers. Implementing the homojunction in a device measuring the IV-characteristics resulted in increased open circuit voltage and a higher fill factor, compared to devices with an intrinsic perovskite layer. MAPI films with an excess of MAI not only showed a lower Fermi level but also higher photoluminescence, and when used in planar light-emitting diodes resulted in electroluminescence quantum efficiency approaching 2%.
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