Publication date: 8th January 2019
Panchromatic detection spanning ultraviolet (UV) to near infrared (NIR) wavelengths is critical for a variety of industrial and scientific applications, such as imaging sensing, chemical/biological detection, night surveillance, and optical communication. Existing NIR inorganic photodetectors based on, for example, gallium nitride and indium gallium arsenide, are expensive and have poor detectivity in the visible region. Here, we demonstrate an organic photodiode (OPD) with broad wavelength response from 300 to 1200 nm, with 40% external quantum efficiency at 1000 nm. This was achieved using a solution-processed donor-acceptor bulk heterojunction of the low band gap polymer, poly[[4-(2-ethylhexyl)-4H-dithieno[3,2-b:2′,3′-d]pyrrole-2,6-diyl]-alt-2,5-selenophenediyl[2,5-bis(2-ethylhexyl)-2,3,5,6-tetrahydro-3,6-dioxopyrrolo[3,4-c]-pyrrole-1,4-diyl]-2,5-selenophenediyl] (PDPPSDTPS), blended with PC60BM, in principle compatible with large-area processing techniques. Detectivity was further increased by using electron and hole blocking layers to suppress dark current – we explore the influence of these layers by determining the temperature dependence of dark current under reverse bias. Considering the superior performance in panchromatic wavelength detection relative to existing inorganic photodiodes, we suggest that OPDs based on PDPPSDTPS represent a promising candidate for image sensing.
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