Publication date: 8th January 2019
Most of the reported efficiencies of perovskite solar cells(PSCs) are at laboratory scale for smaller dimension cells processed on hotplates at 130-170°C for 10-20 minutes with total processing time (including heating and cooling ramp) of about an hour. If this process is scaled to industrial production, would require at least 60-meter long furnace for a belt speed of 10cm/s [1]. Additionally, the electronic transport layer which is generally TiO2 requires about an hour of annealing at 500 ˚C, which is again not a feasible protocol for implantation in roll to roll processing. Therefore, scalability of PSCs at industrial levels is still a challenge. Rapid Thermal Annealing (RTA) is a fast processing technique which can anneal films in much shorter times of few seconds to few minutes and can be easily implemented in roll to roll processing at industrial scale [2]. For successful adoption of RTA for roll to roll processing of PSC, the effect of processing parameter on the film characteristic and in turn cell performance is required to be established. We have designed and developed a rapid thermal processing (RTP) instrument which has ramp rate about 30 °C/sec, and have demonstrated the rapid and uniform processing of compact-TiO2(c-TiO2) and perovskite layer. TiO2 layer was annealed for 5 minutes under ambient conditions and the perovskite layer was annealed for 1 minute in an inert atmosphere in RTP. A PSC device with architecture FTO/c-TiO2/FAPbI3/Spiro-OMeTAD /Au was processed by varying the processing protocols and the individual layer characteristics and device performance were studied as a function of processing parameters. To study the effect processing parameters during RTA individual layers (c-TiO2 and Perovskite) were characterized by X-ray diffraction, SEM, UV-Visible, while the device performance was evaluated by measuring I-V characteristics under illumination. Transparent pinhole free c-TiO2 layer with comparable band gap and better crystallinity were obtained when films were annealed in RTP. Comparatively more compact perovskite layer was obtained on annealing which is desirable for better performance of the device. In comparison to conventional hotplate annealing, the perovskite layer annealed in RTP was found to be more stable as shown in TOC graphic. The RTA processed films and device characteristics were compared with that obtained through conventional methods.
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