DOI: https://doi.org/10.29363/nanoge.hybridoe.2021.018
Publication date: 3rd December 2021
To date, perovskite solar cells (PSCs) have achieved a record certified power conversion efficiency (PCE) of 25.5%. There is still much room for PCE improvement as compared to theoretical Shockley–Queisser limit efficiency over 30%. In addition, the poor long-term operational stability still restricts its large-scale commercial application. The bulk and interfacial carrier non-radiative recombination losses can significantly reduce the efficiency and stability of devices. In order to minimize bulk and interfacial non-radiative recombination losses, Prof. Chen’s research group has carried out systematic and in-depth research work on composition and solvent engineering, additive engineering and interface engineering. The obtained research achievements are as follows: (1) The BF4- anionic doping strategy is developed, which effectively solves the serious carrier recombination problem. The inhibition mechanism of halogen ion migration by large-size organic cations is revealed. (2) The multifunctional additive ligand molecule (11MA) is developed to regulate perovskite crystallization, passivate grain boundary defects, inhibit halogen ion migration and improve humidity stability, achieving an efficiency of 23.3%. The potassium salt additive Molecules (SAMS) containing large size strongly coordinated organic anions is developed. A large size strongly coordinated organic anion grain boundary anchoring strategy was proposed. The mechanism of grain boundary defect passivation and halogen ion migration inhibition is revealed. The device based on CsFA-based perovskite and SAMS delivers a PCE of 22.7%. (3) The interface between electron transport layer and perovskite layer is modified by self-assembled ionic liquid (ImAcHCl) or sulfonium salt (CDSC), achieving interfacial defect passivation and energy band modulation. It is revealed that non-halogen anions (PF6- and SO42-) can effectively chemically bridge the metal oxide electron transport layer and the perovskite layer, thereby improving the interface contact. Two-dimensional perovskite, perovskite grain boundary passivation layer, multi-active-site ligand molecule (MTDAA) and novel phosphonium salt are developed to modulate the interface between perovskite and hole transport layer. The multiple-active-site defect passivation mechanism is revealed.
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