DOI: https://doi.org/10.29363/nanoge.hybridoe.2021.014
Publication date: 3rd December 2021
Gas-quenching is a robust and highly-reproducible approach for upscalable manufacturing of high-quality perovskite films. However, the requirement of high gas pressure on MA-free perovskite materials has limited the accessibility for upscalable manufacturing of stable perovskite films and devices. In this work, by employing tetramethylene sulfoxide (TMSO) as a ligand in the precursor solution, high-quality FA0.9Cs0.1PbI3 perovskite films have been successfully obtained by gas-quenching. Study on the precursor solution and film-forming process revealed the effect of TMSO on the formation of large-grain films, as well as the critical role of gas-quenching in regulating the intermediate films. The absolute MA-free perovskite device exhibits superior stability over the PSCs obtained with MACl additive. The fabricated MA- and Br-free PSCs shows a power conversion efficiency of 21.3% without any passivation treatment. Moreover, gas-quenching with TMSO enables wide gas pressure processing window and superior accessibility to low-pressure processing, demonstrating its promising potential in up-scaling manufacturing of high-efficiency MA-free PSCs.
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