Publication date: 30th October 2021
Over the past few years, broadly, the lead-free halide perovskites have been fascinating and have emerged as promising alternatives to lead halide perovskites in optoelectronic device applications. However, the conversion efficiency of these devices gets hampered due to wide indirect bandgaps and deep defect states. One of the ways to overcome this bottleneck is by creating distortion in the atomic positions of perovskite’s structure. In this work, we have created a local atomic distortion in vacancy-ordered halide triple perovskites (VOHTP) (Cs3M2X9: M3+= Sb3+and Bi3+; X=Cl-, Br-, and I-) by incorporating In3+ trivalent cation, which is represented as Cs3InaM2-aX9. The partial replacement of M3+ in Cs3InaM2-aX9 with In3+ revealed their structural and optoelectronic properties, which were investigated systematically. The incorporation of In3+ is confirmed by XRD. Here we observed an increase in free exciton emission spectra corresponding to 25% of In-substituted perovskites (Cs3InaBi2-aX9). Whereas for antimony-indium mixed combinations, self-trap exciton emission is enhanced because of phonon-electron coupling. From excitation spectra results, it is observed that the nature of the bandgap was changed from indirect to direct only for bromide antimony-indium mixed compounds. From these results, we elucidate a brief understanding for exploring the properties of In3+ incorporation perovskites and their potential applications as optoelectronic material.
Exploratory Research Grant, IIT Madras
Ministry of Human Resources and Development, Govt Of India
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