Publication date: 17th February 2025
Although single band-gap perovskite (PVK) solar cells achieve over 25% efficiency, surpassing the Shockley-Queisser limit requires multi-junction designs for which wide band-gap perovskites are gaining increasing attention. However, wide band-gap PVK cells exhibit a significantly lower Voc than their theoretical potential due to non-radiative carrier losses, often caused by defect states in the bulk and at interfaces. One of these Voc limiting factors is halide phase segregation which leads to the formation of iodide rich regions, which can act as sinks for excess charges causing unwanted recombination.
In this work wide band-gap PVKs, FAPb(IxBr1-x)3 are prepared by sequential evaporation of FAI and an alloy of PbBr2 and PbI2 made by ball milling. Precursor alloying yielding PbIxBr2-x serves as tool to enlarge variety in perovskite composition, while minimizing the number of required evaporation sources and creating more uniformity over different I/Br ratio depositions, due to limited recipe changes. The XRD patterns provided in Figure 1b show the successful conversion of a combination of hexagonal PbI2 and orthorhombic PbBr2 to a new orthorhombic intermetallic PbI0.8Br1.2. Moreover, XPS analysis of shows stoichiometric transfer from the alloy powder to a thin film by thermal evaporation.
M.M., M.D., L.M., O.I. and T.S. acknowledge funding obtained within SolarLab, part of SolarNL, through the Netherlands National Growth Fund.
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