All-inorganic CsPbBr3 perovskite solar cells via sequential thermal evaporation
Sahana Suresh a, Chittaranjan Das a b, Michael Saliba a b
a Institute for Photovoltaics, University of Stuttgart, Pfaffenwaldring 47, 70569, Stuttgart, Germany
b Institute of Energy Materials and Devices, Photovoltaics (IMD - 3), Forschungszentrum Jülich, Germany
Proceedings of International Conference on Hybrid and Organic Photovoltaics (HOPV25)
Roma, Italy, 2025 May 12th - 14th
Organizers: Filippo De Angelis, Francesca Brunetti and Claudia Barolo
Oral, Sahana Suresh, presentation 170
Publication date: 17th February 2025

Perovskite solar cells (PSCs), advancing solar technology with remarkable photoconversion efficiency (PCE) and stability, typically use hybrid organic-inorganic lead halide perovskites. However, concerns remain about the organic component's impact on degradation. Transitioning to all-inorganic cesium perovskites is an alternative route to tackle the long-term stability challenges in PSCs.

Within inorganic perovskites, CsPbI3 suffers from polymorphism ranging from the photoactive α-phase to the inactive δ-phase. In contrast, CsPbBr3 perovskites offer robust thermal, humidity, light stability and do not suffer from polymorphism. With a Shockley-Queisser single-junction limit of ~ 16% and a wide bandgap of 2.3eV, it is attractive for semi-transparent, building-integrated photovoltaics and multijunction applications. Many CsPbBr3 works are based on solution-processing using conventional spin-coating technique limiting uniformity over large areas. Also, dissolving the precursors in solution, which frequently comes with toxicity concerns, can be challenging.

Alternatively, thermal evaporation offers a solvent-free, industry-compatible fabrication method, enabling precise thickness control, conformal and uniform coverage over large substrates.

Here, we fabricate a solvent-free CsPbBr3 PSC via dual-source sequential evaporation. CsPbBr3 films deposited on compact SnO2 electron transport layer, are pinhole-free and exhibit phase purity with reduced defects. Thin film annealing studies using X-ray diffraction, conducted alongside device investigations, revealed a decrease in phase transition temperature from 300°C to 250°C. Finally, the fabricated device results in a PCE of 7.16% with an open-circuit voltage of 1.31V. An all-inorganic PSC with a vacuum-processed absorber layer is demonstrated to achieve a phase-pure, compact film of desired thickness, paving the way for exploring CsPbBr3 active layer.

© FUNDACIO DE LA COMUNITAT VALENCIANA SCITO
We use our own and third party cookies for analysing and measuring usage of our website to improve our services. If you continue browsing, we consider accepting its use. You can check our Cookies Policy in which you will also find how to configure your web browser for the use of cookies. More info