Publication date: 17th February 2025
One of the key properties of hybrid perovskites is ambipolar transport, the ability to transport equal electric currents with both electrons and holes. Such feature is commonly attributed to pure, intrinsic semiconductors and ultimately descends from their proverbial defect tolerance, that makes their optoelectronic properties minimally affected by defects in their crystal structure or composition. A current significant challenge is to get reliable n-type or p-type doping in hybrid perovskites, which would be crucial to unlock improvements in devices requiring unipolar transport, such as field effect transistors or light emitting devices, as well as to limit charge recombination at interfaces in perovskite solar cells, in order to enhance their power conversion efficiency. Here we show experimental study of wide-bandgap perovskite solar cells with the inclusion of a controlled amount of two-dimensional transition metal carbides (MXenes Ti3C2Cl) for interface engineering [1]. The photocarrier dynamics in the active area of the full device was explored with ultrafast optical spectroscopy by combining time resolved photoluminescence and differential transient transmission, in a configuration analogous to that as reference [2]. Our technique disentangles photoexcited electron and hole dynamics, providing direct access to their separate trapping rates, their concentrations and their bimolecular recombination rates.