ENHANCING PEROVSKITE SOLAR CELL STABILITY THROUGH ADVANCED CARBON ELECTRODE AND INTERFACE ENGINEERING
Elena Iannibelli a, Luigi Vesce a, Karthikeyan Pandurangan b, Maria Laura Parisi b, Adalgisa Sinicropi b, Aldo Di Carlo c
a CHOSE – Centre for Hybrid and Organic Solar Energy, Department of Electronic Engineering, Tor Vergata University of Rome, via del Politecnico 1, 00133, Rome
b Department of Biotechnology, Chemistry and Pharmacy, University of Siena, Via A. Moro 2, 53100, Siena, Italy
c CNR-Istituto di Struttura della Materia (CNR-ISM), EuroFEL Support Laboratory (EFSL), Via del Fosso del Cavaliere 100, 00133, Rome, Italy.
Proceedings of International Conference on Hybrid and Organic Photovoltaics (HOPV25)
Roma, Italy, 2025 May 12th - 14th
Organizers: Filippo De Angelis, Francesca Brunetti and Claudia Barolo
Poster, Elena Iannibelli, 159
Publication date: 17th February 2025

Perovskite solar cells (PSCs) have shown great potential as a next-generation photovoltaic technology due to their high power conversion efficiency (PCE) and low manufacturing costs. However, the instability of PSCs, particularly when exposed to moisture, heat and light, has hindered their commercialization. Traditional metal electrodes, such as gold or silver, are not only expensive, but also prone to corrosion issues, further compromising the device stability. The use of carbon electrodes, can significantly improve the device stability under various environmental conditions, including humidity and high temperatures [1]. Carbon electrodes offer several advantages, including low cost, high conductivity, good hydrophobicity and electrochemical corrosion resistance, and compatibility with scalable printing techniques [2], [3].

This work focused on optimizing the perovskite-carbon electrode interface to enhance both the stability and performance of perovskite solar cells. To address this challenge, we explored various strategies, including interfacial engineering, perovskite composition modification and passivation techniques, aiming to reduce the impact of factors such as ion migration and non-radiative recombination that are known to negatively affect the long-term performance and operational lifespan of devices [2]. Besides the adoption of an n-i-p stack fully printed in air with an optimized formulation of FAPbI3 perovskite [4], we investigated the combination of a passivating agent, hexadecyltrimethylammonium bromide (HTAB), and a proper hole transport layer (HTL), poly(3-hexylthiophene-2,5-diyl) (P3HT) (Figure 1). This combination demonstrated excellent thermal stability for more than 600 hours, contributing to the overall robustness of the device. Further stability tests, such as light soaking, are under progress.

This research was funded by the European Union's Horizon Europe Programme, through a FET Proactive research and innovation action under grant agreement No. 101084124 (DIAMOND).

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