III-V semiconductor quantum dots for SWIR light emission and detection
Tariq Sheikh a
a King Abdullah University of Science and Technology (KAUST), Saudi Arabia
Proceedings of International Conference on Hybrid and Organic Photovoltaics (HOPV25)
Roma, Italy, 2025 May 12th - 14th
Organizers: Filippo De Angelis, Francesca Brunetti and Claudia Barolo
Oral, Tariq Sheikh, presentation 138
Publication date: 17th February 2025

Shortwave infrared (SWIR) light emitters and detectors are indispensable across various fields, yet conventional technologies based on epitaxially grown semiconductors like InGaAs are costly and complex to integrate with CMOS technology. Colloidal quantum dots (CQDs) offer a promising alternative through solution-based processing, but prevalent SWIR-active CQD systems often involve heavy metals, limiting their widespread adoption. Here we present significant strides in InAs colloidal nanorods technology aimed at overcoming these limitations. Initially, we address the challenge of synthesizing SWIR-active InAs nanorods by developing a controlled synthesis method using safer, more readily available precursors. This approach enables the production of monodisperse InAs nanorods with tunable bandgaps 2000 nm, expanding their applicability into the extended-SWIR spectrum. Furthermore, we introduce a novel surface-passivation technique with InAs/ZnSe core/shell colloidal nanorods. These nanorods exhibit exceptional emissive properties, demonstrating high photoluminescence quantum yields of up to 60% across the entire technologically crucial SWIR range (1200–1800 nm). Leveraging these advancements, we showcase a SWIR-active InAs nanorod photodetector achieving a record external quantum efficiency of ∼15% at ∼1450 nm. Our findings underscore the potential of InAs CQDs as robust candidates for next-generation SWIR optoelectronic devices, combining high performance with environmentally friendly materials and scalable synthesis methods suitable for industrial applications.

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