Perovskite-inspired metal halides for indoor photovoltaic applications
Paola Vivo a
a Hybrid Solar Cells, Faculty of Engineering and Natural Sciences, Tampere University, P.O. Box 541, Tampere, FI-33014 Finland
Proceedings of International Conference on Hybrid and Organic Photovoltaics (HOPV25)
Roma, Italy, 2025 May 12th - 14th
Organizers: Filippo De Angelis, Francesca Brunetti and Claudia Barolo
Invited Speaker, Paola Vivo, presentation 125
Publication date: 17th February 2025

Perovskite-inspired materials (PIMs) have received increasing attention due to their potential to replace halide perovskites in scenarios where the presence of toxic lead is undesired or not accepted. The typical wide bandgap of PIMs makes them ideally suited for indoor light harvesting, which could enable a battery-less and sustainable Internet-of-Things in the future.

PIMs include a broad family of low-dimensional semiconductors with different stoichiometries [1]. One example is the vacancy-ordered pnictogen-based halides. These materials are intrinsically air stable and can be solution processed. Despite theoretical indoor efficiencies approaching 50% or more, current performance has reached initial efficiencies of ⁓5–10% under 1000 lux indoor lighting using bismuth (Bi)- and antimony (Sb)-based PIMs. Two main challenges associated with PIMs for IPVs are: 1) The inherent low-dimensional nature and high defect densities, which pose challenges such as carrier localization in achieving very high IPV efficiencies, and 2) the lack of unified measurement protocols leading to short-circuit current density overestimation or conducting IPV measurements under illumination intensities different from the recently reported standard test conditions (⁓300 µW cm⁻² at 1000 lux).

In this talk, I report our recent efforts on two-dimensional (2D) PIMs with adaptable structural and photophysical properties for sustainable IPV applications [2-4]. One example is a new vacancy-ordered PIM, Cs2AgBi2I9, exhibiting weak electron-phonon coupling and large polaron formation [3,4]. Cs2AgBi2I9 can overcome the inherent performance loss pathways found in other PIMs due to enhanced electronic dimensionality. The Cs2AgBi2I9 IPV devices achieved a power conversion efficiency of ⁓7.6% under approximately 300 µW cm⁻² WLED illumination [4]. This is a record PCE for IPVs based on halide PIMs. Additionally, the IPV devices of Cs2AgBi2I9 maintained consistent performance under different light color temperatures, showing the versatility of Cs2AgBi2I9 as a reliable IPV absorber in various indoor environments.

P.V. thanks Research Council of Finland (Decision No. 347772) and the Clean and Energy Transition Partnership (CETPartnership), under the 2022 CET Partnership joint call for research proposal, co-founded by the European Commission (GA 101069750) for financial support (SPOT-IT project). The work is part of the Research Council of Finland Flagship Programme, Photonics Research and Innovation (PREIN), decision number 346511.

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