Investigating the Role of ALD-AlOx at SpiroOMeTAD Perovskite Interface in Photovoltaics
Thi Hue Nguyen a, Chittaranjan Das a b, Mayank Kedia a b, Michael Saliba a b
a Institute for Photovoltaics (ipv), University of Stuttgart, Germany
b Institute of Energy Materials and Devices, Photovoltaics (IMD - 3), Forschungszentrum Jülich, Germany
Proceedings of International Conference on Hybrid and Organic Photovoltaics (HOPV25)
Roma, Italy, 2025 May 12th - 14th
Organizers: Filippo De Angelis, Francesca Brunetti and Claudia Barolo
Poster, Thi Hue Nguyen, 113
Publication date: 17th February 2025

In recent years, perovskite solar cells have achieved a power conversion efficiency of >26%. This improvement is due to the exceptional material properties of the perovskite, such as tunable light absorption, high carrier mobility, long diffusion length, and low exciton binding energy. Moreover, researchers focus on diversifying the material composition using mixed-cation and halide formulation, developing different device structures like n-i-p and p-i-n. At the same, perovskite materials suffer from short-term stability under moisture, migration of cations and anions as well as metal from the electrodes. This leads to irreversible degradation of the perovskite.

The single junction n-i-p structure perovskite solar cells with SpiroOMeTAD as a hole transporting layer is a typically used transport layer, although the interface between SpiroOMeTAD and perovskite is hard to stabilize: Reports show that the hygroscopic LiTFSI salts in SpiroOMeTAD tend to aggregrate on the film due to the strong moisture absorbing effect from the air. Additionally, the Li ion was shown to diffuse into the perovskite layer and electron transporting layer to alter their election properties.

To overcome the ion migration, atomic layer deposition of AlOx have been investigated proving to increase stability and power conversion efficiency. However, there is still a lack of an in-depth explanation of the role of AlOx at SpiroOMeTAD perovskite interface. In our work, when the ALD of AlOx is employed between the perovskite and SpiroOMeTAD, the device performance increased to 19.5% relative to the pristine interface of 18%. The overall improvement of the AlOx interface modified PSCs resulted from many factos such as the removal of surface defect states, and formation of AlF from reaction between AlOx and LiTFSI in SpiroOMeTAD, which were confirmed by the PL and HAADF STEM repectively. At the same time, the AlOx interface modified PSCs have better wettability for better deposition of SpiroOMeTAD, contact angle reduced 9° for target devices in comparison with the control devices, confirmed by contact angle experiments with various ALD-AlOx thickness. Our investigation on AlOx modified PSCs with techniques including SEM, HAXPS, and ToF-SIMs reveals that ALD layer positively interacts chemically with both perovskite and SpiroOMeTAD, resulting in better transfer of photogenerated charge carriers along with limiting the migration of ions and protecting the perovskite against moisture.

Keywords: Atomic layer deposition, perovskite solar cell, ALD-AlOx at interface of SpiroOMeTAD and perovskite.  

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