Wide-Band Gap Perovskite based on bromide halide: Impact of light, thermal and X-Ray Irradiation stresses on semi-transparent perovskite solar cells and detectors
Fabio Matteocci a, Marco Girolami b, Diego Di Girolamo a, Jessica Barichello b, Barbara Paci b, Paolo Moras b, Daniele Trucchi b, Stefania Cacovich c, Aldo Di Carlo b
a CHOSE – Centre for Hybrid and Organic Solar Energy, Department of Electronic Engineering, University of Rome ‘‘Tor Vergata’’, Via del Politecnico 1, 00133 Roma, Italy
b CNR-Istituto di Struttura della Materia (CNR-ISM), Monterotondo Scalo 00015, Italy.
c Institut Photovoltaïque d'Île-de-France (IPVF), UMR 9006, CNRS, Ecole Polytechnique - IP Paris, Chimie Paristech - PSL, Palaiseau, 91120, France
Proceedings of International Conference on Hybrid and Organic Photovoltaics (HOPV25)
Roma, Italy, 2025 May 12th - 14th
Organizers: Filippo De Angelis, Francesca Brunetti and Claudia Barolo
Oral, Fabio Matteocci, presentation 107
Publication date: 17th February 2025

Perovskite absorbers attract huge interest in the scientific community thanks to their outstanding optoelectronic properties demonstrating high potential on the development of solar cells, light emitting diodes and X-Ray/Particle Detectors. A class of lead halide perovskite compounds based on bromide halogen (MAPbBr3, FAPbBr3 and CsPbBr3) have been recently studied as UV-vis light absorber with wide bandgap (>2.3eV) for the development of semi-transparent perovskite solar cells (ST-PSC) for building integrated PV field1 . Furthermore, they have been tested as X-Ray detectors for medical imaging application. Although the demonstration of excellent key performing indexes (KPIs), long-term stability remains the main goal to achieve. In this talk, we reported the strategy to improve the performance and the stability of ST-PSC and X-Ray detectors working on hybrid (MA/FAPbBr3, FAPbBr3) and inorganic (CsPbBr3) perovskite compositions, novel 3D/2D perovskite passivation scheme, light management tools and scalable deposition techniques. Several in-situ and ex-situ characterization tools have been performed in order to understand the impact of the stability test on morphological, structural and optoelectronic properties of the device under study. Regarding ST-PSC, state-of-art KPIs have been reached showing PCE of 8.4%, AVT of 68% and LUE above 5.7% using 150nm-thick FAPbBr3 perovskite and sputtered ITO top electrode. Environmental, light and thermal stress have been evaluated using ISOS stability protocols showing improved T80 parameters thanks to the device optimization1. In parallel, self-powered thin-film based X-Ray detectors have been demonstrated for direct X-ray conversion at 0V bias using ST-PSC-like architecture showing high linearity to the radiation dose, surface sensitivity of 185.64 μC Gy-1 cm-2, bulk sensitivity of 3700 μC Gy-1 cm-3 and LoD of 133 nGy s-1 with maximum photon energy at 40KeV. The X-Ray detectors have been tested under continuous X-Ray irradiation for 600 hours absorbing a cumulative radiation dose equal to 189.46 Gy without showing any performance degradation2.    

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