Publication date: 17th February 2025
Improved reverse bias stability and UV resistance are recognized as needs to improve long-term viability of halide perovskite semiconductors in photovoltaic applications. In this talk we will discuss our work on improving stability under both reverse bias stress and reverse current stress, including how interfacial and architecture engineering can have a significant impact on the reverse bias behavior of perovskite solar cells. We show that by controlling both electrode interfaces we can realize average breakdown voltages comparable to those of silicon cells, demonstrating cells that can survive reverse bias under partial shading for hours at a time. We also explore two pathways for cell failure under reverse current stress and demonstrate that some cells can pass reverse current densities corresponding to those at the max power point without permanent damage. Finally, we explore metrology methods for characterizing both cells and modules that allow real-time analysis of failure modes under various stress conditions.