Reducing open circuit voltage deficit in wide bandgap perovskite solar cells through interfacial treatment with aromatic ammonium halides salt and tandem application
Huyen Tran a b, Inchan Hwang a, Junseop Byeon a, Sungjun Hong a b, SeJin Ahn a b, Kihwan Kim a b, Jihye Gwak a b, Inyoung Jeong a
a Photovoltaics Research Department, Korea Institute of Energy Research (KIER)
b Department of Renewable Energy Engineering, University of Science and Technology (UST)
Proceedings of International Conference on Hybrid and Organic Photovoltaics (HOPV25)
Roma, Italy, 2025 May 12th - 14th
Organizers: Filippo De Angelis, Francesca Brunetti and Claudia Barolo
Oral, Huyen Tran, presentation 096
Publication date: 17th February 2025

Wide-bandgap perovskite solar cells, which have an energy bandgap greater than 1.65 eV, show promise for constructing tandem solar cells. However, high bromide content in these cells can lead to photostability and halide segregation problems that affect performance and cause voltage loss. Therefore, minimizing voltage loss caused by non-radiative recombination at the interface is crucial to improving device performance. In current literature, various aromatic ammonium halides have been commonly used to passivate the interfacial region between the perovskite surface and the electron/hole selective layer. These materials enhance photovoltaic performance while also improving stability. However, most studies have focused on the passivation effects depending on the different structures of cations. Since the properties of wide-bandgap perovskite with mixed halide composition can be affected by post-reaction with other halide ions, investigating passivation effects depending on the different halogenates of the passivation molecules is highly required.

Our study involved treating a small amount of fluorinated aromatic ammonium halides(FAAX, X=Cl, Br, I) on the perovskite surface. The results showed that the treated film displayed suppressed nonradiative recombination and reduced trap density, leading to significantly reduced voltage loss. It was found that the degree of defect passivation and resulting device performances were changed depending on the different halides. The optimal device achieved a high power conversion efficiency close to 22% with an excellent improvement in voltage from 1.13V to 1.21V, demonstrating the great potential of the material in devices. Finally, based on the wide-band gap perovskite top cell, we realized a high-performance four-terminal perovskite/Cu(In,Ga)Se2 tandem devices. These findings emphasize the importance of carefully designing of passivation molecules for the wide-bandgap perovskite, as it could lead to significant improvements in PCE and the stability of these devices.


• UST International Presentation Support Program, University of
Science and Technology (UST)
• Renewable Energy Research Department, University of Science
and Technology (UST)
• Photovoltaic Research Department, Korea Institute of Energy
Research (KIER)

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