Porphyrin-based additives for ambient-air fabricated Cs-FAPI perovskite modules above 22% efficiency

Maurizio Stefanelli^a, Angelo Lembo^b, Luigi Vesce^a, Aldo Di Carlo^a

^aDepartment of Electronic Engineering, C.H.O.S.E. (Centre for Hybrid and Organic Solar Energy), University of Rome “Tor Vergata”, via del Politecnico 1, Rome 00133, Italy

^bDepartment of Chemical Science and Technology, University of Rome “Tor Vergata”,via della Ricerca Scientifica, Rome 00133, Italy

Proceedings of International Conference on Hybrid and Organic Photovoltaics (HOPV25)

Roma, Italy, 2025 May 12th - 14th

Organizers: Filippo De Angelis, Francesca Brunetti and Claudia Barolo

Oral, Maurizio Stefanelli, presentation 090
Publication date: 17th February 2025

The solution processing route of perovskite (PVK) photovoltaic (PV) fabrication has a very high potential for commercialization of the emerging technology. In the last years formamidiunium-based perovskite is leading the efficiency charts in single junction configuration for PVK PV reaching efficiencies above 26%.[1] The major challenges with those formulations are the stabilization of the photoactive α-phase, the buried, bulk and top interfaces passivation and the upscaling with industrial compatible techniques in ambient air environment in which the humidity can promote the δ-phase quite easily.[2]–[8]
Here we present a study on nickel-porphyrin additive as a bulk passivator for Cs-FAPI perovskite made in ambient air with scalable techniques (meniscus coating) and green antisolvent quenching. Three different substitution patterns with meso-phenyl and beta-phenylethynyl or beta-phenylimidazo-/-linker are explored as substituent in nickel-porphyrin structure to improve the dipole moment and the charge extraction consequently. Moreover, the terminal ammonium group in the above-mentioned porphyrin’s substituent can easily interact with the PVK lattice enabling the incorporation of metal-porphyrin system into the absorber layer. Coupling the bulk passivation effect of porphyrins and Cs-FAPI PVK trap states evidenced by one of the highest Voc (1.162) ever recorded to our knowledge with only 368 mV loss for a PVK band gap of 1.53 eV. The bulk and the top-interface passivations were studied in detail and optimized for small area cells (0.5 cm2 active area) and minimodules (10 cm2 active area). In both cases the maximum recorded efficiency was above 22% with enhanced light soaking (ISOS-L1) and shelf-life (ISOS-D1) stability above 1000h.

References:

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[6] S. Li et al., “The Formation Mechanism of (001) Facet Dominated α-FAPbI3 Film by Pseudohalide Ions for High-Performance Perovskite Solar Cells,” Adv. Sci., vol. 2300056, no. 001, pp. 1–9, 2023

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