Publication date: 17th February 2025
Transition metal oxides have attracted increasing attention for applications in electron and hole transport layers of hybrid and organic photovoltaic devices. These layers present complex electronic structures due to the presence of narrow electronic d-bands within the bandgap. Such bands are expected to significantly influence the carrier transport on the layers, thereby affecting their role in solar cells.
In this context, the optimization of depositions and accurate optical characterization of oxide electron and hole transport layers were performed. The depositions were performed by reactive sputtering of metallic targets using variable O2/Ar flow rates. Detailed plasma characterization included optical emissions and self-bias voltages as a function of the O2 flow and deposition powers.
The optical analysis was based on approximation free expressions, using spectral transmittance, reflectance, and ellipsometry data. It allowed accurate determinations of the refractive index, absorption coefficient, bandgap, and layer thickness (20 ≤ h ≤ 1200 nm). The focus was on MoOx and Nb2O5 electron transport and NiOx and CoOx hole transport results. Except for Nb2O5 layers, which display classical characteristic semiconducting absorption edges, the spectra show clear absorption effects inside the bandgap associated with the presence of the d-states. The relationships between the optical results and electronic structure besides the structural and morphological characteristics and deposition parameters were analyzed.
The effective Nb2O5 [1,2] and CoO use of the layers to lead-halide perovskite cells are presented, and the potential applications of MoOx and NiOx layers are discussed.
São Paulo Research Foundation FAPESP, grant 2020/12356-8
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