Publication date: 17th February 2025
During operation, perovskite solar cells (PeSCs) are subjected to continuous heating (55–65°C) under 1-sun illumination, with additional heat generated internally through mechanisms such as Joule heating, recombination, and photon thermalization. Effective thermal management or heat dissipation is crucial to minimize heat-induced damage. This study introduces a fullerene derivative, PC61B-TEG, as a multifunctional interlayer between the perovskite and C60 electron transport layer (ETL) in inverted PeSCs. To enhance heat dissipation and charge extraction, PC61B-TEG was doped with N-DMBI, an n-type dopant. The incorporation of n-doped PC61B-TEG significantly improved device performance, achieving a PCE of 24.42%. The device also demonstrated exceptional thermal stability, retaining 90% of its initial PCE after 2400 hours at 85°C (under N2 without encapsulation) and 80% of its initial PCE after 1180 hours under 1-sun illumination at room temperature and 25% RH (with encapsulation). The improved thermal conductivity (κ) of the n-doped PC61B-TEG enabled efficient heat transfer from the perovskite layer, while enhanced electrical conductivity (σ) and an upshifted Fermi level (EF) facilitated superior charge transport and increased quasi-Fermi level splitting. This resulted in higher open-circuit voltage (VOC), short-circuit current density (JSC), and fill factor (FF). The study underscores the importance of doping in enhancing both performance and stability, demonstrating its potential for diverse perovskite optoelectronic applications.[1,2]
This work was funded by National Research Foundation (NRF) of Korea (2019R1A6A1A11044070, 2020M3H4A3081814).