A study of the role of interfaces in degradation of lead-tin perovskite solar cells
Fiona McPartlan a, Daphne Dekker a, Bruno Ehrler a
a AMOLF, Amsterdam, Netherlands, Netherlands
International Conference on Hybrid and Organic Photovoltaics
Proceedings of International Conference on Hybrid and Organic Photovoltaics (HOPV24)
València, Spain, 2024 May 12th - 15th
Organizer: Bruno Ehrler
Poster, Fiona McPartlan, 186
Publication date: 6th February 2024

Device stability is now one of the main challenges that we face in lead-tin perovskite solar cell production. Device stability has been linked to the interactions between the perovskite and the interfaces in the device [1,2]. What occurs at the interfaces between the perovskite and its transport layers is not yet fully understood.

This project focuses on the study of the perovskite-Electron Transport Layer (ETL)-metal contact interfaces in lead-tin perovskite (Cs0.15FA0.85Pb0.5Sn0.5I3) solar cells to examine the contribution of the interfaces to the degradation of the perovskite solar cells. We fabricated and compared full device stacks to stacks without metal contacts, and without an ETL (see graphical abstract), with half of each batch of samples are stored in the clean nitrogen environment of the glovebox, and the other half in sample boxes outside of the glovebox (exposed to the atmosphere of the lab).

We examine the evolution of the device performance and their optical, structural, and morphological properties as they degrade over the course of timespans from 7 to 28 days. We compare these changes to gain insight on the potential different mechanisms of degradation introduced with each layer added to a solar cell device.

When we examine the SEM images we see clear morphological differences over time in the presence of the ETL, indicating the existence of some interaction between the perovskite and the electron-transport layer (C60 and BCP). To further examine this interaction, we varied the electron-transport layer (with PCBM) and the passivation layer to further estimate the contribution of the type of electron-transport layer on device performance and stability.

© FUNDACIO DE LA COMUNITAT VALENCIANA SCITO
We use our own and third party cookies for analysing and measuring usage of our website to improve our services. If you continue browsing, we consider accepting its use. You can check our Cookies Policy in which you will also find how to configure your web browser for the use of cookies. More info