Proceedings of International Conference on Hybrid and Organic Photovoltaics (HOPV24)
DOI: https://doi.org/10.29363/nanoge.hopv.2024.059
Publication date: 6th February 2024
Perovskite solar cells (PSCs) have been considered as a strong candidate for next generation photovoltaic technology, exhibiting a certified power conversion efficiency (PCE) of 26.1% in 2023. Intensive efforts have been consistently made to reach an extremely high PCE close to theoretical value on one hand and to ensure the long-term stability of PSCs on the other hand, where the residual tensile strain in perovskite lattice plays a detrimental role. Lattice strain engineering of perovskite layer was pursued by implementing the heteroepitaxial growth on the bottom. The heteroepitaxial growth of perovskite film enabled the residual lattice tensile strain to be released, affecting the interface recombination and the crystal phase stability as well. The effect of strain engineering was well reflected in both the photovoltaic parameters, particularly in open-circuit voltage and fill factor, and the long-term stability, which highlights the importance of the lattice strain engineering for halide perovskite-based electronic devices.
This work was supported by the National Research Foundation of Korea(NRF) grant funded by the Korea government(Ministry of Science and ICT)(No. RS-2023-00233865, No. NRF-2021R1C1C1009686, and No. NRF-2022M3J1A1085278).
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