Integrated near-field/far-field light scattering design creates 36,1% efficient Si/III-V multijunction solar cell
Andrea Cordaro a, Ralph Muller b, Stefan Tabernig a, Nico Tucher b, Patrick Schygulla b, Oliver Hohn b, Benedikt Blasi b, Albert Polman a
a Center for Nanophotonics, AMOLF, Science Park, 104, Amsterdam, Netherlands
b Fraunhofer Institute for Solar Energy Systems ISE, Germany.
International Conference on Hybrid and Organic Photovoltaics
Proceedings of International Conference on Hybrid and Organic Photovoltaics (HOPV24)
València, Spain, 2024 May 12th - 15th
Organizer: Bruno Ehrler
Invited Speaker Session, Albert Polman, presentation 056
DOI: https://doi.org/10.29363/nanoge.hopv.2024.056
Publication date: 6th February 2024

Si-based multi-junction architectures are hindered by incomplete harvesting in the near-infrared spectral range when the Si bottom cell is flat, without the conventional macroscopic light trapping surface texture. This is the case for e.g. III-V/Si multijunction solar cells where the III-V layers are wafer-bonded on a flat Si bottom cell, and for some perovskite/silicon tandem designs where the perovskite layers are ideally grown on a flat Si surface.

Here we present a novel nanostructured Ag back contact design that creates strong light trapping in a Si bottom cell with a flat top surface. We design a diffractive silver back-reflector featuring a near-infrared light scattering matrix that optimizes trapping of multiply-scattered light into a range of diffraction angles. By integrating near-field and far-field simulations we minimize reflection and parasitic plasmonic absorption by engineering destructive interference in the patterned back contact.

We test the new design on flat single-junction Si TOPCon solar cells and find a strongly improved near-infrared external quantum efficiency using the nano-backpattern. We then fabricate nanopatterned metagratings on GaInP/GaInAsP//Si two-terminal triple-junction solar cells via substrate conformal imprint lithography and characterize them optically and electronically, demonstrating a certified record efficiency of 36,1% for Si-based multijunction solar cells. The results are relevant for several other tandem cell designs.

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