Memristive perovskite solar cells for self-powered IoT edge computing
Konstantinos Rogdakis a b, Michalis Loizos a, Weifan Luo c, Patricia A Gaina c, Jovana V. Milić c, Emmanuel Kymakis a b
a DDepartment of Electrical Computer Engineering, Hellenic Mediterranean University (HMU), Heraklion 71410, Crete, Greece
b Institute of Emerging Technologies (i-EMERGE) of HMU Research Center, Heraklion 71410, Crete, Greece
c Adolphe Merkle Institute, University of Fribourg, 1700 Fribourg, Switzerland
International Conference on Hybrid and Organic Photovoltaics
Proceedings of International Conference on Hybrid and Organic Photovoltaics (HOPV24)
València, Spain, 2024 May 12th - 15th
Organizer: Bruno Ehrler
Invited Speaker Session, Konstantinos Rogdakis, presentation 051
DOI: https://doi.org/10.29363/nanoge.hopv.2024.051
Publication date: 6th February 2024

Metal halide perovskites are high-quality semiconductors with outstanding opto(electro)ionic properties originating in their mixed ionic-electronic conductivity. These characteristics broaden the range of their applications in optoelectronic devices, particularly solar cells, where most research efforts are focused due to their remarkable performance in solar energy harvesting. However, hysteresis in current-voltage characteristics is a feature of perovskite solar cells responsible for causing losses in performance1, which has been associated with ion migration, charge trapping, and ferroelectricity as some of the contributing factors2. Contrary to solar cells, hysteresis effects are desired traits for applying halide perovskites in resistive switching memories3. To this end, perovskite materials have been implemented for information storage, logic operations, artificial synapses, and crossbar arrays, with the advantage of their low-cost, low-temperature, and solution-processed fabrication, in contrast to the techniques required for conventional oxide-based memristors4. Devices with high ON/OFF ratios, fast switching speed, and good retention have been demonstrated5; however, the relatively low cycling endurance (~104 cycles) limits their potential use for practical applications6,7,8. In this work, we address these operational stability issues of halide perovskite-based resistive switching memories by assembling 2D/3D heterostructures based on perfluorinated spacer cations9. We compare the effect of Ruddlesden-Popper and Dion-Jacobson phases in the 2D/3D heterostructure on the performance of the halide perovskite memristive device. As a result, we show that devices with 2D/3D heterostructures outperform reference cells by extending their cycling endurance and retention, offering a versatile strategy for advancing halide perovskite-based memristors.


 

The work has been supported by the Greece 2.0 Basic Research Financing Action «Horizontal support of all sciences» Sub-action 2 program of Hellenic Foundation for Research and Innovation, under the Project INTELLECT. The INTELLECT project has received funding under grant agreement no. 81045.

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