Proceedings of International Conference on Hybrid and Organic Photovoltaics (HOPV23)
Publication date: 30th March 2023
ABSTRACT
Passivating of perovskite solar cells has become one the main topics in perovskite-based tandems in recent years since it can lead to high photoluminescence quantum yield, low non-radiative losses, and hence high VOC, enabling over 30% efficiency. Here, butylammonium bromide (BABr) passivated FAPbI3-based perovskite films were synthesized via a two-step deposition method including evaporation of a PbI2/CsBr template and then spin coating of FAI/MAI/MACl/BABr solution to obtain a conformal homogenous perovskite film after annealing. While the morphology, domain size (around 1000±50 nm), and surface roughness (65±5 nm) of the BABr-containing films was the same as the samples without BABr, the thickness of BABr containing samples was a bit higher 870 nm (compared to 800 nm without BABr). Interestingly, the optical bandgap of the modified films was lower (1.55 compared to 1.51 eV). In addition, perovskite films deposited on indium tin oxide/self-assembled-monolayer (ITO/SAM) stack show a photoluminescence quantum yield of 0.5% (>2-fold increase) leading to a quasi-Fermi level splitting of 1.08±0.02 eV and non-radiative losses of <130±10 meV. A significant change was observed in the diffraction pattern. The addition of BABr strongly reduces the presence of a PbI2 phase. Devices in a planar ITO/MeO-2PACz/Perovskite/C60/SnOx/Ag configuration demonstrate an efficiency of 19.56% (JSC >23.34 mA/cm2, VOC >1.023 V, FF >81%) and stabilized maximum power point tracking output of >19%. BABr passivated FAPbI3-based perovskite films are a promising platform for single- and multi-junction applications.
Keywords: FAPbI3-based perovskite, Evaporation-solution deposition, Tandem, p-i-n configuration, BABr additive.
This project has received funding from the European Union’s Horizon 2020 research and innovation programme under the Marie Skłodowska-Curie grant agreement No. 101026729.
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