Proceedings of International Conference on Hybrid and Organic Photovoltaics (HOPV23)
Publication date: 30th March 2023
Perovskite solar cells have been in the prime limelight of photovoltaic research community due to its outstanding optoelectronic properties and performance in past decades. However, defects in metal halide perovskite materials play a very crucial role due to its mixed ionic-electronic behavior in understanding the device physics, ion migration, recombination mechanisms, and charge carrier dynamics. The presence of defect states in bulk or at interfaces induces charge carrier recombination that affects the photovoltaic performance parameters. Of particular interest is to understand and control the defect formation and defect concentration in order to achieve highly efficient and reproducible devices. The scope of present work is to perform evaluation of defect properties in acetamidinium substituted CH3NH3PbI3 perovskite solar cells using thermal admittance spectroscopy (TAS) and deep level transient spectroscopy (DLTS) measurement techniques. This combined investigation permits to determine the nature of traps, activation energy of defects, defect density and capture cross-section of the trap level. Steady-state capacitance vs frequency scans at different temperatures (C-f-T) from 200K to 350K reveal three capacitance steps at low frequency-high temperature, high frequency-low temperature and at intermediate frequency and temperature. The low frequency capacitance shows strong increase in capacitance with increase in temperature due to ionic contribution. The prominent defects were observed with activation energies of 0.16 eV and 0.54 eV from the band edges. However, the nature of trap energy level (electron or hole type) can be determined using transient capacitance measurement technique. The capacitance transient spectra at different temperatures (C-t-T) from 200K to 350K demonstrates anomalous behavior such as capacitance increases initially with temperature and then decreases above 320K possibly due to perovskite phase transition. DLTS spectra reveal a dominant defect level with activation energy of 0.56 eV. These findings show qualitative agreement with the theoretical values using DFT calculations reported in literature. Finally, we comprehensively provide insights into transient mechanisms, charge accumulation, band bending and carrier emission using band diagrams.