Proceedings of International Conference on Hybrid and Organic Photovoltaics (HOPV23)
Publication date: 30th March 2023
Organometallic perovskite semiconductors are promising candidates for optoelectronic devices due to their excellent light absorption and emission properties. Furthermore, the optical and electronic properties of the materials can be readily tuned by chemical substitution[1]. One of the hallmarks of lead-based perovskites is the high defect tolerance of the materials due to shallow trap states[2], which allows long diffusion lengths in solution-processed semiconducting nanocrystalline films. However, lead halide perovskites present two enduring challenges towards commercialization: toxicity and instability. The search for lead-free perovskites is expansive and several metal cations are under investigation, among these is Bismuth[3]. It has been demonstrated that Bismuth perovskites are significantly stable relative to lead and tin perovskites, while also addressing the issue of toxicity[4]. However, the optoelectronic performance of Bismuth halide perovskites is lacking due to shorter diffusion lengths and lower charge carrier mobility[2].
In this work, we perform low-temperature micro photoluminescence (PL) and Raman measurements on various thin films of Methyl Ammonium Bismuth Iodide perovskites. Our results show dramatic shift in the PL intensity of the spectral features at longer wavelengths. It is hypothesized that shallow defect/trap states contribute towards this pronounced temperature dependence of these low energy emission signatures. Finally, we compare our results to the prototypical Methyl Ammonium Lead Iodide system for benchmarking and understanding the effect of the cation, crystal dimensionality, and defects on optical emission of Bismuth perovskites.
The authors would like to acknowledge the LUMS Faculty Initiative Fund (FIF) for financial support for the project. A.A.K also thanks the LUMS FTG grant for travel support.