Proceedings of International Conference on Hybrid and Organic Photovoltaics (HOPV23)
DOI: https://doi.org/10.29363/nanoge.hopv.2023.122
Publication date: 30th March 2023
Intimate pi-stacking in organic semiconductors is known to form aggregates, which drive dissociation of photogenerated excitons through wavefunction delocalization. In particular, the onset of non-fullerene acceptors (NFAs) such as Y6 has seen a dramatic rise in discussion of exciton delocalization and its relation to (acceptor-donor) hole transfer. Here, we revisit the concept of donor exciton delocalization and show that such treatment is necessary to accurately describe the (donor-acceptor) electron transfer channel in high performance OPV blends. Specifically, we evaluate how pi-interactions in donor polymer aggregates contribute to delocalization strength, revealing that the formation of a luminescent, delocalized exciton in strongly p-interacting donor materials opens a pathway for free carrier generation. As a result, the electron transfer pathway partially bypasses the formation of performance-limiting singlet charge-transfer states during electron transfer in OPV blends. Moreover, we observe that such aggregation induced delocalization leads to a reduction of the triplet charge transfer state density. These mechanisms improve the internal quantum efficiency in OPVs to realize a power conversion efficiency of 19.2%. Ultimately, we provide insight into overcoming the fundamental limits of OPVs associated with intrinsic material properties. Designing materials with more pronounced delocalization character should maximize the exciton dissociation efficiency and minimize terminal back recombination, pushing OPVs closer to theoretical efficiency limits.