Proceedings of International Conference on Hybrid and Organic Photovoltaics (HOPV23)
Publication date: 30th March 2023
The hybrid dry-wet perovskite technique has been employed to deposit perovskite on top of a pyramidal texturized silicon bottom cell to fabricate a tandem device [1-3]. This state-of-the-art technology combines vacuum evaporation of a PbX2 (X = I, Br, Cl) inorganic layer and a wet process to convert it into a perovskite layer. The perovskite deposition via a hybrid dry-wet route provides conformal, high throughput, and uniform thin films [4]. However, most of the hybrid deposition methods today employ non-scalable wet processes in the conversion's second step, such as spin-coating. Thus it is difficult to evaluate the scalability of tandem devices fabrication toward industrial mass production. Another method that could be used is the solvent-vapor spraying technique which allows the coating on a large area, however, the conversion process is slow, taking a few tens of minutes [5].
Here, we study a facile and scalable hybrid deposition combining thermal evaporation and slot-die coating [6,7]. We first (co)evaporate an inorganic PbI2 (or with CsBr) scaffold layers. We then use slot-die to coat an organic solution (containing MA+, FA+ cations) on the scaffold layer to convert it into MAFA(Cs)Pb(Ix,Br1-x)3 perovskite. Deposition parameters of both step 1 and step 2 are carefully optimized to obtain the full conversion and hence a homogeneous perovskite film on a demonstrated 5x5 cm² large area. We then characterize the converted film using different techniques to obtain the film composition, topography, and morphology. The perovskite film was then implemented into a single junction cell device, delivering high performance with 19.8 % efficiency (at a small active area) and with high stability at 18% under 1 sun illumination in ambient. We also use this technique to coat perovskite on the pyramidal-textured Silicon cell and we obtained a conformal perovskite layer on the surface. The fabrication of the 2-Terminal Perovskite/Si tandem devices integrated with this perovskite is also ongoing. We aim to present in the final presentation in HOPV23 the performances of these tandems on a large scale to allow further evaluation of the applicability of this methodology to the upscaling textured perovskite/Si tandem devices.
This work was supported via the “Tandem Made in France” project in the framework of the collaboration between IPVF Photovoltaïc institute and CEA center. The authors thank the Investment Program For Future (Programme d’Investissement d’Avenir - ANR-IEED-002-01) granted by IPVF and the internal funding from CEA.
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