Halide organic-inorganic photovoltaics and light-emitting diodes operate by exploiting charge injection/extraction layers which are crucial for several important processes governing performance and lifetime. In p-i-n device architectures, PEDOT:PSS remains a best-seller for hole injection/extraction into/from the perovskite active layer, but it exhibits acidity and hydrophilicity which are responsible of a relatively limited device stability [1]. Intense research efforts have been put into the development of innovative p-type interfacial layer materials but there is still a need for materials presenting highly tunable properties as well as a high photo-chemical stability. In this context, the family of perovskite oxides have been recently explored to act as interlayers for optoelectronic applications, considering their stable physical properties under ambient conditions. While only few examples have been reported in the literature [2]-[3], we propose in this work to use SrTi_0.7Fe_0.3O_3-δ (STFO) perovskite oxide thin films as charge extraction/injection layers for p-i-n halide perovskite devices (LED or solar cells, see example in Figure 1). We especially demonstrate the possibility to process STFO layers of high crystallinity on FTO-glass substrates using pulsed laser deposition (PLD) under partial oxygen pressure, at relatively moderate temperatures (<450°C) as compared to traditional preparation techniques. Subsequent annealing steps, either by rapid thermal annealing (RTP) or conventional annealing, have been applied to the oxide thin films to further improve the crystal quality of the polycrystalline layers, and to tune their optical and electronic properties. Highly transparent layers presenting a low surface roughness can be easily achieved by this method. More importantly, the halide perovskite layer deposited on top of such perovskite oxide films shows a larger average grain size and crystalline order than with PEDOT:PSS, suggesting a positive impact of the perovskite interlayer on the growth mechanism of the perovskite active layer.  A clear reduction of the fraction of optically inactive halide perovskite phase (delta-phase of FA_0.85Cs_0.15Pb(I_0.85Br_0.15)₃) was also observed with the presence of the perovskite. The integration of our optimized perovskite oxide films as hole transport interlayers in optoelectronic devices based on halide perovskite active layer demonstrates the strong potentialities of this class of perovskite oxide towards efficient and stable all-perovskite devices.