Effects of Applying Benzylamine as a Monoamine Additive in Wide-bandgap Perovskites
Suer Zhou a, Yangwei Shi b, James Drysdale a, Joel Smith a, Benjamin Gallant a, Margherita Taddei b, Harry Sansom a, Akash Dasgupta a, Ashley Marshall a, Jian Wang b, David Ginger b, Henry Snaith a
a Department of Physics, University of Oxford, Clarendon Laboratory, Parks Road, OX1 3PU, United Kingdom
b Department of Chemistry, University of Washington, Seattle, WA, 98195-1700, USA
International Conference on Hybrid and Organic Photovoltaics
Proceedings of International Conference on Hybrid and Organic Photovoltaics (HOPV23)
London, United Kingdom, 2023 June 12th - 14th
Organizers: Tracey Clarke, James Durrant and Trystan Watson
Poster, Suer Zhou, 107
Publication date: 30th March 2023

Silicon/perovskite tandem solar cells are a promising direction for increasing the power output of solar cells beyond the Shockley-Queisser limit for single junctions. The ideal bandgap of perovskite on top of silicon is around 1.68-1.70eV, which can be achieved by mixed cation, mixed halide perovskites, such as FA0.75Cs0.25Pb(I0.8Br0.2)3. However, there are still many challenges for wide-bandgap compositions, such as film inhomogeneity and photoinduced halide segregation, which will impact the long-term stability during operation.

We employ benzylamine as a bulk additive to stabilize wide-bandgap mixed halide perovskites. Amines and ammonium halides have long been used to passivate perovskite materials. However, the understanding of how they interact with the perovskite is still limited. In this work, a 1.68eV wide-band gap MA-free perovskite is used as an example to show how benzylamine (BnAm) can affect the composition and phases present in the perovskite. We found that depending on the organic cations in the perovskite, the amine reaction can be quite different. In addition, while BnAm additives cause lower-dimensional phases to form, their corresponding benzyl ammonium halide additives do not. By using BnAm as an additive, the photoluminescence quantum yield (PLQY) and open-circuit voltage (Voc) of the device were improved. Moreover, compared to the pristine perovskite or BnAm surface-treated perovskite devices, BnAm bulk additive devices achieved a remarkable T80 stability of 2,460 hours under constant 65°C, AM1.5 light illumination stress test. BnAm-modified wide-bandgap perovskite has great potential to be integrated into silicon/perovskite tandem solar cells to improve their overall operational lifetime.

The author, Suer Zhou, acknowledges the Rank Prize Funds for their funding.

© FUNDACIO DE LA COMUNITAT VALENCIANA SCITO
We use our own and third party cookies for analysing and measuring usage of our website to improve our services. If you continue browsing, we consider accepting its use. You can check our Cookies Policy in which you will also find how to configure your web browser for the use of cookies. More info