Room Temperature Sputtering of NiOx Hole Transport Layer for Single and Tandem Perovskite Based Solar Cells and Modules
Sownder Subramaniam a b c d, Yinghuan Kuang a b c, Robert Gehlhaar a, Tom Aernouts a b c, Jef Poortmans a b c d, Jan Genoe a b d
a Imec, imo-imomec, Thin Film PV Technology – partner in Solliance, Thor Park 8320, 3600 Genk, Belgium
b EnergyVille, imo-imomec, Thor Park 8320, 3600 Genk, Belgium
c Hasselt University, imo-imomec, Martelarenlaan 42, 3500 Hasselt, Belgium
d KU Leuven, Dept. of Electrical Engineering (ESAT), Leuven, Belgium
International Conference on Hybrid and Organic Photovoltaics
Proceedings of International Conference on Hybrid and Organic Photovoltaics (HOPV23)
London, United Kingdom, 2023 June 12th - 14th
Organizers: Tracey Clarke, James Durrant and Trystan Watson
Poster, Sownder Subramaniam, 078
Publication date: 30th March 2023

Perovskite solar cells (PSCs) are at the heart of photovoltaic research. The transport layers which sandwich the perovskite absorber in these devices play a crucial role in device performance and stability. Typical hole transport layers (HTLs) used in inverted PSCs and corresponding tandem devices are PTAA, Self-Assembled Monolayers (SAMs) and NiOx among others. Of these HTLs, NiOx1 offers suitable material characteristics, excellent stability and is easy to scale up, e.g., by sputter deposition. However, sputtered NiOx typically requires a high temperature (~300°C) post-annealing step to tuning its optoelectronic properties2. Such a high-temperature annealing step limits the application of NiOx as HTL in tandem and flexible devices because of their low thermal budget.

In this work, we have developed a NiOx HTL through radio frequency sputtering of the NiO target without using extra substrate heating during the deposition (referred to as RT-NiOx). RT-NiOx works equivalently well without post-annealing or annealing at a reduced temperature of ~150°C. With the newly developed HTL, we can achieve similar optical and electrical properties of the NiOx layer annealed at 300°C. So far, with RT-NiOx we have achieved a power conversion efficiency of 20.9% on single junction PSCs against 21.5% on similar devices with 300°C annealed NiOx. We will present the implementation of RT-NiOx contact layers in the perovskite modules and in tandem solar cells with CIGS or Silicon bottom cells.

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