Proceedings of International Conference on Hybrid and Organic Photovoltaics (HOPV23)
Publication date: 30th March 2023
Perovskite solar cells (PSCs) are at the heart of photovoltaic research. The transport layers which sandwich the perovskite absorber in these devices play a crucial role in device performance and stability. Typical hole transport layers (HTLs) used in inverted PSCs and corresponding tandem devices are PTAA, Self-Assembled Monolayers (SAMs) and NiOx among others. Of these HTLs, NiOx1 offers suitable material characteristics, excellent stability and is easy to scale up, e.g., by sputter deposition. However, sputtered NiOx typically requires a high temperature (~300°C) post-annealing step to tuning its optoelectronic properties2. Such a high-temperature annealing step limits the application of NiOx as HTL in tandem and flexible devices because of their low thermal budget.
In this work, we have developed a NiOx HTL through radio frequency sputtering of the NiO target without using extra substrate heating during the deposition (referred to as RT-NiOx). RT-NiOx works equivalently well without post-annealing or annealing at a reduced temperature of ~150°C. With the newly developed HTL, we can achieve similar optical and electrical properties of the NiOx layer annealed at 300°C. So far, with RT-NiOx we have achieved a power conversion efficiency of 20.9% on single junction PSCs against 21.5% on similar devices with 300°C annealed NiOx. We will present the implementation of RT-NiOx contact layers in the perovskite modules and in tandem solar cells with CIGS or Silicon bottom cells.