Exploring the Operating Mechanisms in the Frequency and Time Domains
Agustin O. Alvarez a, Osbel Almora b, Francisco Fabregat-Santiago a, Germà Garcia-Belmonte a
a Institute of Advanced Materials (INAM), Universitat Jaume I, 12071 Castelló de la Plana, Spain
b Department of Electronic, Electric and Automatic Engineering, Universitat Rovira I Virgili, 43007 Tarragona, Spain
International Conference on Hybrid and Organic Photovoltaics
Proceedings of International Conference on Hybrid and Organic Photovoltaics (HOPV23)
London, United Kingdom, 2023 June 12th - 14th
Organizers: Tracey Clarke, James Durrant and Trystan Watson
Poster, Agustin O. Alvarez, 053
Publication date: 30th March 2023

In recent years, impressive results have been achieved for new photoconversion technologies, thanks to the efforts of the international scientific community. Different materials, including silicon, perovskite and BiVO4, have been used in different applications such as solar cells, water-splitting or even X-ray detectors. However, despite the amazing results achieved, a deeper understanding of the operating mechanisms that control the response and lifetime of these devices is still needed to overcome the barriers that prevent the widespread use of these materials.

Frequency and time domain techniques have been widely used to learn how the devices work, and thus to identify their limitations. Some of the most common frequency domain techniques are impedance spectroscopy (IS), intensity-modulated photocurrent (IMPS) and photovoltage (IMVS) spectroscopies. In this talk, we show that the combination of these techniques has a much greater potential than they have separately, allowing better identification of the operating mechanisms, and resulting in a more reliable equivalent circuit.[1] This combination allows parameters to be obtained more accurately and even allows the determination of parameters challenging to obtain by other techniques, such as separation efficiency. We claim that the methodology presented in this talk can in principle be applied to any photosensitive device, and as evidence of this, we present the application to a silicon photodiode, a perovskite solar cell and a BiVO4 photoanode.[2]

While these results are intended to convince the audience of the enormous potential of frequency domain techniques, we do not intend to reduce the importance of time domain techniques. Contrarily, both categories provide complementary information, which can be crucial for a clear understanding of the operation of the device under study. As an example of this, we present the combination of IS with the current response to large voltage variations for a perovskite-based X-ray detector. Furthermore, we show that combining these results with drift-diffusion simulations (another powerful tool) allows us to clearly understand how ionic motion and its subsequent interfacial accumulation have a determining effect on the sensitivity of these X-ray detectors.[3]

This work has received funding from the European Union's Horizon 2020 research and innovation program under the Photonics Public Private Partnership (www.photonics21.org) with the project PEROXIS under the grant agreement N° 871336. This project has received funding from the European Union’s Horizon 2020 MSCA Innovative Training Network MAESTRO under grant agreement No 764787. A.O.A. and F.F.-S. want to acknowledge Ministerio de Economía y Competitividad (MINECO) from Spain under the project, ENE2017-85087-C3-1-R.

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