N-type Perovskite Doping by Post-Fabrication Dopant Oxydation
Zuzanna Molenda a, Sylvain Chambon a, Dario Bassani b, Lionel Hirsch a
a Laboratoire de l'Intégration du Matériau au Système, Université de Bordeaux
b Institut des Sciences Moléculaires, UMR CNRS 5255, Université de Bordeaux, Cours de la Libération 351, FR-33405 Talence, France
International Conference on Hybrid and Organic Photovoltaics
Proceedings of International Conference on Hybrid and Organic Photovoltaics (HOPV23)
London, United Kingdom, 2023 June 12th - 14th
Organizers: Tracey Clarke, James Durrant and Trystan Watson
Poster, Zuzanna Molenda, 022
Publication date: 30th March 2023

Metal halide perovskites are interesting candidates as materials for next generation electronics, including photovoltaics. Their energy payback time is much shorter than that of other well-known semiconductors such as silicon, GaAs or GaN that require extreme levels of purity and crystallinity. Moreover, they are made of abundant elements and can be ink-printed on flexible substrates, opening new fields of applications. In order to compete with well-established technologies, efficient and well-controlled doping is a key point. Unfortunately, the “defect tolerance” and ionic character of perovskites render them particularly challenging to dope using vacancies, interstitial ions or substitution. In this work, we present a new method to overcome these difficulties that uses a two-step spin-coating-based doping of methylammonium lead triiodide (MAPbI3) thin films with metastable Sm2+ ions. We propose that homovalent substitution of Pb2+ with Sm2+, followed by Sm2+ oxidation to Sm3+ releases an electron into the conduction band. The resulting n-type majority charge carrier concentration is confirmed by UPS, showing a Fermi level shift towards the conduction band minimum by 0.5 eV. The doped perovskite shows a 3 orders of magnitude conductivity increase with respect to the undoped one. XRD and optical spectroscopy show that the crystal lattice is preserved and that there is no change in the bandgap. The XPS and ToF-SIMS depth profiles show the presence of the dopant all throughout the perovskite film. The ionized dopant concentration, found using the Mott-Schottky analysis, is 1017 cm-3 for the most conductive sample. This value is in agreement with the hypothesis of the dopant freeze-out at room temperature, which is supported by Mott-Schottky plots simulations for different dopant activation energies. The preliminary results of this doping approach on other perovskite formulations, such as formamidinium lead triiodide (FAPbI3) and mixed cation perovskite (FA0.93MA0.07PbI3), show the applicability of the process.

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