Proceedings of International Conference on Hybrid and Organic Photovoltaics (HOPV22)
DOI: https://doi.org/10.29363/nanoge.hopv.2022.127
Publication date: 20th April 2022
Defects in perovskite solar cells are known to affect the performance, but their precise location and role remain to be firmly established. Given their nature, the detection of defect states requires highly sensitive characterization techniques. Here, we present highly sensitive measurements of the sub-bandgap external quantum efficiency to investigate defect states in perovskite solar cells. From the sub-bandgap photocurrent spectra, at least two defect states can be identified in p-i-n solar cells.
As absorption below the band gap is negligible, the measured spectra are prone to significant interference effects. These effects make it difficult to derive energetic parameters for the defect states. By comparing devices with opaque and semi-transparent back contacts, we demonstrate the large effect of optical interference on the magnitude and peak position in the sub-bandgap EQE in perovskite solar cells. From optical simulations of the electric field intensity, it is revealed that defects localized near the interfaces are responsible for the measured photocurrents.
A series of optical cavities, using optical spacers of different lengths and a mirror on top of semi-transparent devices, is then constructed. This allows for the precise manipulation of the optical interference without affecting the electrical properties of the device. By comparing experimental and simulated EQE spectra, we show that defects contributing to sub-bandgap EQE in p-i-n devices are predominantly located near the interface between the perovskite layer and the electron transport layer.