Defects in Tin-Halide Perovskite Semiconductors
Annamaria Petrozza a
a Center for Nano Science and Technology @Polimi, Istituto Italiano di Tecnologia, Via Giovanni Pascoli, 70/3, Milano, Italy
International Conference on Hybrid and Organic Photovoltaics
Proceedings of 13th Conference on Hybrid and Organic Photovoltaics (HOPV21)
Online, Spain, 2021 May 24th - 28th
Organizers: Marina Freitag, Feng Gao and Sam Stranks
Invited Speaker, Annamaria Petrozza, presentation 126
Publication date: 11th May 2021

I will discuss here our studies on the nature of defects and their photo-chemistry in tin-halide perovskites thin films. First I show that, in inert conditions, tin, p-doped, and lead (intrinsic) based perovskite thin film show comparable photoluminescence quantum yield, at comparable morphology, while photovoltaic devices, showing comparable device architecture show a dramatic reduction in power conversion efficiency for tin based devices. Tin perovskite thin film are also extremely stable under light soaking. However, the use of additives, meant to control the level of doping in the semiconductor, or the mixing of lead-tin metal cation for modulating the semiconductor bandgap, induces strong instabilities instabilities.  I will show how these behaviours are all related to the to the energetics of defects and their photochemistry activity

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