Co-Evaporating Efficient MAPbI3 Absorbers – Film Formation and for Varying MAI/PbI2 Ratios
Karl Heinze a, Heiko Kempa a, Robert Heidrich a, Thomas Burwig a, Roland Scheer a, Paul Pistor a
a Martin-Luther-University Halle-Wittenberg, Germany, Von Danckelmann Platz 3, Halle, Germany
International Conference on Hybrid and Organic Photovoltaics
Proceedings of 13th Conference on Hybrid and Organic Photovoltaics (HOPV21)
Online, Spain, 2021 May 24th - 28th
Organizers: Marina Freitag, Feng Gao and Sam Stranks
Oral, Paul Pistor, presentation 102
Publication date: 11th May 2021

In comparison to their wet-chemical counterparts, the film formation of the dry, vacuum-based synthesis of perovskite absorbers is still rather obscure. Even for the standard absorber, methyl ammonium lead iodide (MAPbI3), the growth requirements and synthesis routes are not sufficiently developed to date. In this contribution, we analyze the film formation of MAPbI3 perovskite absorbers in quasi real-time during their growth by co-evaporation with the aid of in situ X-ray diffraction (XRD). The detailed analysis of phase evolutions allows us to pinpoint structure-property relationships between the involved crystalline phases as a function of perovskite composition and processing conditions. For example, the X-ray diagnostics allows us to identify the presence and monitor the evolution of secondary phases such as PbI2 or the film orientation during the growth process. In addition, the time resolved phase analysis gives us direct access to the kinetics of the film formation. More specifically, we analyze the effect of different precursors flux rate ratios and substrate temperatures on the crystal growth. We find the perovskite formation to strongly depend on the processing temperature and determine suitable process windows for optimal absorber compositions, where small amounts of PbI2 secondary phases seem to benefit its electronic properties. Ultimately, we report on our progress in fabricating efficient devices with co-evaporated perovskite absorbers (>14%) in a regular n-i-p structure using a ITO/SnO2/Perovskite/PTAA/Au device configuration.

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