Proceedings of 13th Conference on Hybrid and Organic Photovoltaics (HOPV21)
Publication date: 11th May 2021
Investigations of photovoltaic devices and semiconductors are essential to enhance the efficiency of preparation methods as well as their electronic and optical properties. Different parameters define these properties, e.g., number of defects and trap states, interface interactions, energy and electron transfer behavior and, of course, absorption properties and response to photon stimulation.
Surface characterization of such materials is usually done with scanning electron, scanning tunnel and atomic-force microscopes, which can gather information about homogeneity, conductivity, carrier mobility and defect center of films, semiconductors or within devices. But there still is a lack of information about important parameters that are necessary for understanding and optimizing the preparation and efficiencies of these materials.
We present here how combining time-resolved laser scanning microscopy – offering a broad range of techniques – with a spectrometer results in a valuable and powerful toolbox. This combination of microscopic (e.g., FLIM, PLIM, fast switch between widefield and confocal resolution, or carrier diffusion measurements) and spectroscopic methods (such as time-resolved photoluminescence or wavelength dependent emission scanning) allows investigating the photophysical properties of semiconductors, nanoparticles, QDs, polymers, solid-states as well as nanostructures on a whole new level. This additional information enables gaining a deeper understanding of both photophysical processes as well as structure-property relationships, which will help for the optimization of properties and efficiencies in practical applications.